Wafer level die integration and method therefor

ABSTRACT

A method of manufacturing a semiconductor device includes providing a wafer for supporting the semiconductor device. An insulation layer is disposed over a top surface of the wafer. The method includes forming a first interconnect structure over the top surface of the wafer with temperatures in excess of 200° C., forming a metal pillar over the wafer in electrical contact with the first interconnect structure, connecting a semiconductor component to the first interconnect structure, and forming encapsulant over the semiconductor component. The encapsulant is etched to expose a portion of the metal pillar. A buffer layer is optionally formed over the encapsulant. The method includes forming a second interconnect structure over the encapsulant in electrical contact with the metal pillar with temperatures below 200° C., and removing a portion of a backside of the wafer opposite the top surface of the wafer.

FIELD OF THE INVENTION

The present invention relates in general to semiconductor devices and,more particularly, to a method of fabricating a wafer-level packagehaving integrated thin-film devices, redistribution layers andintegrated circuit dies or other packages.

BACKGROUND OF THE INVENTION

Semiconductors, or computer chips, are found in virtually everyelectrical product manufactured today. Chips are used not only in verysophisticated industrial and commercial electronic equipment, but alsoin many household and consumer items such as televisions, clotheswashers and dryers, radios, and telephones. As products become smallerbut more functional, there is a need to include more chips in thesmaller products to perform the functionality. The reduction in size ofcellular telephones is one example of how more and more capabilities areincorporated into smaller and smaller electronic products.

As electronic products become increasingly miniaturized, it is desirableto combine several chips into a single system package. By combining whatwere previously separate and distinct chips into a single package,manufacturing costs can be greatly reduced. Although preferable, theintegration of chips or other circuitry formed using thin filmprocessing techniques on wafers with other chips and packages canpresent many challenges. For example, today's thin-film manufacturingprocesses require the use of expensive, specialty substrate materialswhen forming wafer-level packages. Although a PCB may be used as asubstrate, they are relatively delicate and may be damaged by the hightemperatures used during thin-film processing. Also, in today'swafer-level package devices, any connected IC chips are generallylimited to a 2D layout configuration. As a result, the number of ICchips that can be coupled directly to a substrate is greatly limited inaccordance with the geometry of that substrate. Furthermore, because thechips or dies are generally mounted over tape or Copper (Cu) foil,inter-wafer, and intra-wafer registration variation of die mounted onthe wafer is significant and negatively impacts system performance.

In many applications, it is desirable to achieve wafer level packageintegration with one or more semiconductor devices. The interconnectbetween the semiconductor die has been achieved with through holeconductive vias or through hole plating and redistribution layers (RDL).However, the formation of the interconnect structure, including RDLs, istypically performed on an organic substrate having a low glasstransition temperature (Tg). The substrate Tg is typically less than200° C., which limits processing options for the interconnect structure.

SUMMARY OF THE INVENTION

A need exists for a method of forming a package having integrated thinfilm devices and circuitry and other mounted dies, devices, or packages.In addition, a need exists for manufacturing techniques for the systemas described which reduce process steps, resulting in shorter cycle timeand lower cost.

In one embodiment, the present invention is a method of manufacturing asemiconductor device, comprising providing a wafer for supporting thesemiconductor device, forming an insulation layer over a top surface ofthe wafer, forming a first interconnect structure over the insulationlayer with temperatures in excess of 200° C., forming a metal pillarover the wafer in electrical contact with the first interconnectstructure, connecting a semiconductor component to the firstinterconnect structure, forming encapsulant over the semiconductorcomponent, forming a second interconnect structure over the encapsulantin electrical contact with the metal pillar with temperatures below 200°C., and removing a portion of a backside of the wafer opposite the topsurface of the wafer.

In another embodiment, the present invention is a method ofmanufacturing a semiconductor device, comprising providing a wafer forsupporting the semiconductor device, forming a raised metal layer overthe wafer, mounting a semiconductor component over the wafer, formingencapsulant over the semiconductor component, forming an interconnectstructure over the encapsulant in electrical contact with the raisedmetal layer with temperatures below 200° C., and removing a portion of abackside of the wafer.

In another embodiment, the present invention is a method ofmanufacturing a semiconductor device, comprising providing a wafer forsupporting the semiconductor device, forming an insulation layer over atop surface of the wafer, forming a circuit over the top surface of thewafer, removing a portion of a backside of the wafer opposite the topsurface of the wafer, etching the insulation layer to expose a portionof the circuit, connecting a first semiconductor component to thecircuit, and depositing first encapsulant over the first semiconductorcomponent.

In another embodiment, the present invention is a semiconductor package,comprising an insulation layer for electrical insulation, a firstinterconnect structure formed over the insulation layer. The firstinterconnect structure is formed with temperatures in excess of 200° C.The semiconductor package includes a metal pillar formed over the firstinterconnect structure, a semiconductor component connected to the firstinterconnect structure, encapsulant formed over the semiconductorcomponent, and a second interconnect structure formed over theencapsulant in electrical contact with the metal pillar. The secondinterconnect structure is formed with temperatures below 200° C.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an example semiconductor device;

FIGS. 2A-2F illustrate a process of forming a wafer-level package;

FIG. 3 illustrates a wafer-level package with a single-stack metal layerto facilitate die attachment;

FIG. 4 illustrates a wafer-level package with an additional insulationor etch-stop layer;

FIG. 5 illustrates a wafer-level package with additional packagesconnected to the wafer with solder balls and stud bumps;

FIG. 6 illustrates a wafer-level package with additional packagesconnected to the wafer with wirebonds and solder balls;

FIG. 7 illustrates a wafer-level package with an attached heat spreader;

FIGS. 8A-8G illustrate a process of forming a wafer-level package withembedded metal pillars;

FIG. 9 illustrates a wafer-level package with a plated metal layer;

FIG. 10 illustrates a wafer-level package with vias formed within theencapsulant;

FIG. 11 illustrates a wafer-level package with a buffer layer; and

FIG. 12 illustrates a wafer-level package with a passivation or etchstop layer.

DETAILED DESCRIPTION OF THE DRAWINGS

The present invention is described in one or more embodiments in thefollowing description with reference to the Figures, in which likenumerals represent the same or similar elements. While the invention isdescribed in terms of the best mode for achieving the invention'sobjectives, it will be appreciated by those skilled in the art that itis intended to cover alternatives, modifications, and equivalents as maybe included within the spirit and scope of the invention as defined bythe appended claims and their equivalents as supported by the followingdisclosure and drawings.

A wafer-level package having integrated passive devices, circuitry, andmounted IC dies or other packages can be manufactured which serves toalleviate the cost and difficulty associated with combining a pluralityof devices into a single package. Moreover, the system can bemanufactured using less process steps and cheaper materials, whichcontributes to shorter cycle time and lower overall cost.

The manufacture of semiconductor devices involves formation of a waferhaving a plurality of die. Each die contains hundreds or thousands oftransistors and other active and passive devices performing one or moreelectrical function. For a given wafer, each die from the wafertypically performs the same electrical function. Front-end manufacturinggenerally refers to formation of the semiconductor devices on the wafer.The finished wafer has an active side containing the transistors andother active and passive components. Back-end manufacturing refers tocutting or singulating the finished wafer into the individual die andthen packaging the die for structural support and/or environmentalisolation.

A semiconductor wafer generally includes an active surface havingsemiconductor devices disposed thereon, and a backside surface formedwith bulk semiconductor material, e.g., silicon. The active surfacecontains a plurality of semiconductor die. The active surface is formedby a variety of semiconductor or wafer-level processes, includinglayering, patterning, doping, and heat treatment. In the layeringprocess, semiconductor materials are grown or deposited on the substrateby techniques involving thermal oxidation, nitridation, chemical vapordeposition, evaporation, and sputtering. Photolithography involves themasking of areas of the surface and etching away undesired material toform specific structures. The doping process injects concentrations ofdopant material by thermal diffusion or ion implantation.

A mounted semiconductor device is shown in FIG. 1. Device 10 involvesmounting an active area 12 of die 14 face down toward a chip carriersubstrate or PCB 16. Active area 12 may contain active and passivedevices, conductive layers, and dielectric layers according to theelectrical design of die 14. The electrical and mechanical interconnectbetween die 14 and substrate or PCB 16 is achieved through a solder bumpstructure 20 comprising a large number of individual conductive solderbumps or balls 22. The solder bumps are formed on bump pads orinterconnect sites 24, which are disposed on active area 12 of die 14.Bump pads 24 connect to the active circuits of die 14 by conductiontracks formed in active area 12. Solder bumps 22 are electrically andmechanically connected to contact pads or interconnect sites 26 oncarrier substrate or PCB 16 by a solder reflow process. Thesemiconductor device provides a short electrical conduction path fromthe active devices on die 14 to conduction tracks on carrier substrateor PCB 16 in order to reduce signal propagation distance, lowercapacitance, and achieve overall better circuit performance.

Turning to FIG. 2A, a first step in manufacturing a wafer-level packagewith integrated IC dies or other packages is shown. Wafer-levelprocessing is performed over dummy wafer 30. Wafer-level processingincludes the building up of a redistribution layer (RDL), analogcircuitry, passive devices, active devices, or combinations thereof overwafer 30 and may involve single layer or multi-layer processing. Wafer30 includes a wafer or substrate material such as a sacrificial silicon(Si) wafer or other glass wafer. Because wafer 30 includes a high glasstransition temperature (Tg) material, wafer processing can take place atrelatively high temperatures. In one embodiment, an RDL is formed attemperatures in excess of 200° C. During wafer-level processing,insulation layer 32 is formed over wafer 30. Insulation layer 32includes one or more layers of a dielectric material such as silicondioxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (SiON),silicon nitride (Si3N4), tantalum pentoxide (Ta2O5), and polyimide.Insulation layer 32 also acts as an etch stop layer. As such, duringremoval of wafer 30, insulation layer 32 is used to detect an end-pointof wafer 30 and to prevent damage to the components or circuitry formedover wafer 30. Insulation layer 32 is formed by physical vapordeposition (PVD) or chemical vapor deposition (CVD).

In the present embodiment, an exemplary RDL structure is formed overwafer 30, however any suitable RDL structure, and/or other circuitry ordevices may be formed during wafer-level processing of wafer 30. In thiscase, the RDL structure includes contact pads or conductive layer 34that is deposited and patterned over insulation layer 32. Conductivelayer 34 includes aluminum (Al), aluminum alloys, copper (Cu), nickel(Ni), gold (Au), silver (Ag), salicide, polysilicon, or otherelectrically conductive material suitable for deposition on a substrateor wafer 30. A PVD, CVD, electrolytic plating, or electroless platingprocess is used to form conductive layer 34. Over conductive layer 34,passivation layer 35 is formed. Passivation layer 35 includes aninsulative material such as polyimide, benzocyclobutene (BCB),polybenzoxazoles (PBO), epoxy based insulating polymer, or otherinsulating polymer materials. Passivation layer 35 provides physicalsupport to and electrical insulation between the components, devices,and different layers of wafer 30.

Conductive layer 36 is patterned and deposited over conductive layer 34and passivation layer 35. Referring to FIG. 2A, conductive layer 36 iselectrically and mechanically connected to conductive layer 34.Passivation layer 37 is deposited over conductive layer 36. Conductivelayer 38 is patterned and deposited over passivation layer 37.Conductive layer 38 is electrically and mechanically connected toconductive layer 36, as shown on FIG. 2A. Passivation layer 40 isdeposited over conductive layer 38 and provides physical support andelectrical isolation to the components formed over wafer 30.

Passivation layer 40 is etched to form a plurality of vias that exposeportions of conductive layer 38. Conductive layer 42 is deposited overand into the vias in passivation layer 40. Conductive layer 42 includesa plurality of contact pads that are in electrical connection with thedevices and interconnect structure formed over wafer 30.

Depending upon the application, the structure formed over wafer 30includes different combinations of patterned metal, dielectric,insulation, and passivation layers. For example, some applicationsrequire that additional conductive, metal layers or dielectric layers beformed over wafer 30, or that some be removed.

In an alternative embodiment, a release layer is formed betweeninsulation layer 32 and wafer 30. The release layer is formed as part ofwafer 30 as a growth top layer formed by hydrogen (H2), oxygen (O2) orother gas implanting with annealing to facilitate separation of a layerof material from wafer 30. Alternatively, a thermal release layer isformed by depositing a thermal release material over wafer 30 belowinsulation layer 32. Thermal release material includes heat releasetape, or a thermal release adhesive that adheres to surfaces below apre-defined temperature, but releases those surfaces when heated to thepre-defined temperature.

Referring to FIG. 2B, adhesive layer 44 is deposited over passivationlayer 40 and conductive layer 42. A temporary wafer carrier 46 is thenbonded to passivation layer 40 using adhesive layer 44. Wafer carrier 46can be glass, Si, ceramic, metal, polymer composite, or other rigidmaterial.

FIG. 2C shows the removal of wafer 30 and patterning of insulation layer32. Wafer 30 is removed by mechanical backgrinding with an additionalwet etching step. Alternatively, plasma etching and/or achemical-mechanical planarization (CMP) process can be used. In thepresent embodiment, a majority of wafer 30 is initially removed using abackgrind process that leaves approximately 10-25 μm of wafer 30remaining. The remaining wafer 30 is removed using a wet etch, dry etch,or CMP process. In an alternative embodiment, wherein a release layer isformed over or within wafer 30, wafer 30 is removed by triggering therelease layer. After removal of wafer 30, insulation layer 32 isexposed. Insulation layer 32 is etched to create vias exposing portionsof conductive layer 34 using a laser drill, or other etching process.

Referring to FIG. 2D, IC dies or packages 48 are connected to thebackside of wafer 30. Packages 48 include filter, memory and other ICchips, processors, microcontrollers, known-good packages, or any otherpackaged device containing semiconductor die or other electronic devicesor circuitry. Contact pads 50 are formed on a surface of packages 48using an electrolytic plating or electroless plating process and includea conductive material. Contact pads 50 are connected to conductive layer34 or optional under-bump metallization (UBM) 52 using solder bumps (notshown). The solder bumps electrically and mechanically connect contactpads 50 to conductive layer 34 or UBM 52. The bumps are formed using asolder reflow process performed on conductive material deposited overthe openings etched into insulation layer 32. The bumps include asolder, Au, or Cu material. In alternative embodiments, stud bumps,wirebonds, or other connection technologies are used to connect contactpads 50 of packages 48 to wafer 30. An optional underfill material isdeposited underneath or around packages 48 to provide physical supportto packages 48.

Because packages 48 are mounted over UBM 52 rather than mounting package48 over tape or Cu foil, the inter-wafer and intra-wafer registrationvariation of package 48 are minimized. Accordingly, there is no need forthe use of an additional alignment carrier to position packages 48.

Turning to FIG. 2E, encapsulant 54 is formed over packages 48, optionalunderfill, and backside of wafer 30. Encapsulant 54 includes a plasticmaterial such as polyimide, mold compound, and other polymer matrixcomposites. Encapsulant 54 may further include a filler material toassist in matching the coefficient of thermal expansion (CTE) ofpackages 48 to encapsulant 54. Encapsulant 54 is deposited using aspinning process or spraying, printing, or molding to encapsulatepackages 48 at the wafer level.

As shown on FIG. 2E, an optional adhesive layer 56 is deposited overencapsulant 54. An optional wafer carrier or supporting substrate 58 isconnected to encapsulant 54 using adhesive layer 56. Wafer carrier 58includes a glass, Si, or laminate panel and may be permanently ortemporarily bonded to encapsulant 54. If temporary, wafer carrier 58 isremoved after wafer carrier 46 is released or after wafer 30 is diced.Wafer carrier 58 provides additional support to the device duringremoval of wafer carrier 46.

Referring to FIG. 2F, wafer carrier 46 is released and the front surfaceof wafer 30 and the circuitry formed thereon are cleaned. Bumps 60 areformed over conductive layer 42. Bumps 60 include Au, or Cu structuresor another conductive material such as tin/lead (Sn/Pb), copper/zinc(CuZn), or copper/silver (CuAg) solder each containing an optional fluxmaterial. Bumps 60 are formed using a solder reflow process. An optionalUBM 61 is formed over conductive layer 42 and beneath bumps 60. UBM 61is formed by first etching a portion of conductive layer 42 and applyingone or more metal layers using a vacuum deposition by evaporation orsputtering process or a chemical plating process. UBM 61 includes aconductive material such as titanium (Ti), nickel vanadate (NiV), or Cuhaving thicknesses of approximately 1000Å, 3250Å, and 8000Å,respectively. For Cu, etchants include A70 with about 11.15% nitric acid(HNO3) and 6.3% acetic acid (CH3COOH) or A75 with about 75.7% phosphoricacid (H3PO4) and 7.35% acetic acid (CH3COOH). The etchant for Ti can be1.67% hydrogen fluoride with 1.67% hydrogen peroxide and remainingwater. Additional system components or packages are attached to bumps60. In an alternative embodiment, additional system components orpackages are connected to conductive layer 42 using wire bonds or othersurface mount technology (SMT).

Turning to FIG. 3, insulation layer 32 is not formed over wafer 30.Conductive layer 34 and UBM 52 are formed as a single metal stack.

Referring to FIG. 4, an additional insulation layer 64 is formed overinsulation layer 32. Insulation layer 64 provides electrical insulationfor the devices and circuitry formed over wafer 30. After removal ofwafer 30, both insulation layer 32 and insulation layer 64 are etched toexpose a portion of conductive layer 34. Optional UBM 52 is thendeposited over the openings etched in insulation layers 32 and 64 tofacilitate the connection of packages 48 to conductive layer 34.

FIG. 5 illustrates alternative methods for connecting packages 48 towafer 30. The connection methods include solder bumps 66 that connectcontact pads 50 of packages 48 to conductive layer 34. Solder bumps 66are formed using a solder reflow process and include a conductivematerial. UBM 52 is formed over conductive layer 34 to facilitate theconnection of solder bumps 66. Stud bumping 68 is also used to connectpackages 48 to conductive layer 34. Stud bumping 68 includes a Au or Custud bumping material. Any other flip-chip or SMT is used to connectpackages 48 to wafer 30.

FIG. 6 shows a further alternative method for connecting packages 48 toconductive layer 34. Again, bumps 66 are used to connect contact pads 50of packages 48 to wafer 30. However, other contact pads 50 of packages48 are connected to conductive layer 34 using wire bonds 70. Wire bonds70 include a conductive material such as Au, Cu, or Al and form aphysical and electrical connection between contact pads 50 andconductive layer 34.

Turning to FIG. 7, the deposition of encapsulant 54 is controlled toexpose a backside of packages 48. Alternatively, a portion ofencapsulant 54 is removed to expose a backside of packages 48. Overencapsulant 54 and backside of packages 48 metal layer 72 is deposited.Metal layer 72 includes a metal foil layer and is laminated over thebackside of packages 48 to act as a heat spreader to facilitate theremoval of heat from packages 48 and to normalize heat distribution overa surface of packages 48.

FIGS. 8A-8G illustrate an alternative method for forming a wafer-levelpackage. Wafer-level processing on dummy wafer 80 builds up transmissionlines, ground planes, integrated passive devices (IPDs), active devices,RDLs or other devices and/or circuitry. Wafer-level processing includesa high-temperature (for example, over 200° C.) process, or alow-temperature (for example, less than 200° C.) process. However,because wafer 80 includes a wafer or substrate material with arelatively high Tg such as a sacrificial Si wafer or other glass wafer,a high-temperature wafer-level process can be used to form RDL and othercircuitry over wafer 80. Referring to the example RDL shown in FIG. 8A,metal layer or UBM 82 is deposited and patterned over wafer 80. UBM 82includes Al, aluminum alloys, Cu, Ni, Au, Ag, salicide, polysilicon, orother electrically conductive material suitable for deposition on asubstrate. A PVD, CVD, electrolytic plating, or electroless platingprocess is used to form UBM 82. Over UBM 82, passivation layer 84 isformed. Passivation layer 84 includes an insulation material such aspolyimide, BCB, PBO, epoxy based insulating polymer, or other insulatingpolymer materials. Passivation layer 84 provides physical support to andelectrical insulation between the layers of wafer 80.

Conductive layer 86 is patterned and deposited over UBM 82 andpassivation layer 84 and is electrically and mechanically connected toUBM 82. Over conductive layer 86, passivation layer 88 is deposited.Conductive layer 90 is patterned and formed over passivation layer 88.Conductive layer 90 is electrically and mechanically connected toconductive layer 86. Passivation layer 92 is deposited over conductivelayer 90 and provides physical support and electrical isolation to thecomponents formed over wafer 80.

Depending upon the application, the structure formed over wafer 80includes different combinations of metal, dielectric, insulation, andpassivation layers. For example, some applications require thatadditional conductive or metal layers and dielectric layers be patternedand formed over wafer 80, or that some be removed.

Turning to FIG. 8B, an optional metal seed layer 94A is deposited overwafer 80 to facilitate formation of metal layer 94. A portion ofoptional metal seed layer 94A is shown below photoresist layer 96. Metalseed layer 94A includes a conductive material such as Cu, Al, or Au andis deposited as a single or multi-layer metal. Over metal seed layer94A, photoresist layer 96 is deposited. A plurality of openings isopened in photoresist layer 96 using a photo patterning process todefine the areas for selective plating of metal layer 94. Metal layer 94is then deposited over the openings in photoresist layer 96 and metalseed layer 94A. In one embodiment, the thickness of metal layer 94 isbetween approximately 5 to 40 μm.

Turning to FIG. 8C an additional photoresist layer 98 is deposited overmetal layer 94 and photoresist layer 96. In one embodiment, however,photoresist layer 96 is removed before the deposition of photoresistlayer 98 over wafer 80. Photoresist layer 98 is patterned using a photopatterning process to create a plurality of openings in photoresistlayer 98. Metal layer 100 is deposited over the openings defined byphotoresist layer 98. Metal layer 100 takes the form of metal pillars,walls or other raised structures or metal layers that project from wafer80 and allow for the 3D formation of additional structures or connectionof components over wafer 80 and makes the long process time of throughvia plating less necessary. The height of metal layer 100 is greaterthan the height of a top surface of packages 102 after they areconnected to wafer 80 (see FIG. 8D). Metal layer 100 in combination withconductive layer 90, metal layer 94, and metal layer 108 (shown on FIG.8E) provide electrical shielding for packages 102 connected to wafer 80.In one embodiment, the height of metal layer 100 in combination withmetal layer 94 is approximately the same as that of encapsulant 106 asshown in FIG. 8D.

After plating metal layer 100, photoresist layer 98 and photoresistlayer 96 are removed. Exposed portions of the metal seed layer are thenremoved using an etching process.

Turning to FIG. 8D, packages 102 are connected to metal layer 94.Contact pads 104 of packages 102 are connected to metal layer 94 using athermal bonding process, SMT or flip-chip mount technology. Whenattaching packages 102, metal layers 94 and 100 facilitate accuratedie-to-wafer registration. In an alternative embodiment, contact pads104 of packages 102 are connected to metal layer 94 using wirebonds orsolder bumps. An optional UBM is formed over metal layer 94 tofacilitate the connection of solder bumps to metal layer 94.

Encapsulant 106 is deposited over packages 102. Encapsulant 106 includesa polymer composite such as mold compound, or molding underfillmaterial. The two-step metal plating process for forming metal layers 94and 100 facilitate the deposition of encapsulant 106 around and underpackages 102 by increasing the standoff distance between packages 102and passivation layer 92. Encapsulant 106 is deposited so as to expose atop surface of metal layer 100. In an alternative embodiment, however,encapsulant 106 is deposited to cover metal layer 100 and a portion ofencapsulant 106 is then removed using plasma etching or a polishingprocess to expose metal layer 100. Encapsulant 106 is applied using amolding, or vacuum printing process.

Turning to FIG. 8E, a low-temperature wafer-level process is used tobuild additional circuitry and devices over wafer 80. The additionalcircuitry and devices include RDLs, passive devices such as capacitors,resistors and inductors, active devices incorporating one or moretransistors, or other electronic devices and structures. In oneembodiment, the low-temperature wafer level process is performed attemperatures below approximately 200° C. In the low-temperature process,metal layer 108 is deposited over encapsulant 106. Metal layer 108 isphysically and electrically connected to metal layer 100. A passivationlayer 110 is formed over metal layer 108. Metal layer 112 is patternedand deposited over passivation layer 110 and is in electrical contactwith metal layer 108. An additional passivation layer 114 is formed overmetal layer 112. In alternative embodiments, different combinations ofmetal, insulation, and passivation layers are deposited duringlow-temperature wafer-level processing.

Turning to FIG. 8F, wafer 80 is removed. A first portion of wafer 80 isbackgrinded to an approximate thickness of 5 to 25 μm. The remainingamount of wafer 80 is removed using wet etching, plasma etching or a CMPprocess. During wafer 80 removal, backgrinding tape 116 is applied overwafer 80 to physically support wafer 80 and the circuitry, devices, andcomponents formed over or connected to wafer 80. After wafer 80 isremoved, backgrinding tape 116 is removed. In some cases backgrindingtape 116 is removed after the back side interconnection of wafer 80 iscomplete or after wafer 80 is singulated.

In an alternative embodiment, a temporary wafer carrier is attached withan adhesive over the front side of wafer 80 during removal of wafer 80.The temporary wafer carrier is removed after wafer 80 is removed, backside interconnection of wafer 80 is complete, or after wafer 80 issingulated. In some cases, a permanent wafer carrier is attached to thefront side of wafer 80 to provide support during removal of wafer 80.

Turning to FIG. 8G, bumps 118 are formed over UBM 82 using a solderreflow process. External system components and additional devices areconnected to bumps 118 and placed in electrical connection with thedevices formed over and components connected to wafer 80. Duringformation of bumps 118, backgrinding tape, temporary wafer carriers, orpermanent wafer carriers are connected to wafer 80 for physical support.Additional interconnection methods such as wire bonding, pad-to-padbonding, or stud bumping are used to connect external devices andcomponents to UBM 82.

Turning to FIG. 9, UBM 120 is deposited over wafer 80 for connection ofpackages 102. A single metal layer 100 is deposited over UBM 120 to formthe metal pillars over wafer 80. To compensate for the diminished heightof UBM 120, the height of bumps or studs 122 connecting packages 102 towafer 80 is increased. The increased height of bumps or studs 122 orother connection method allows for improved deposition of encapsulant106, optional underfill, or other molding material around packages 102.

Referring to FIG. 10, encapsulant 106 covers metal layer 100. Beforedepositing conductive layer 108, however, encapsulant 106 is etched toform vias 124 that allow conductive layer 108 to electrically connect tometal layer 100. Vias 124 are formed by laser drilling or deep reactiveion etching (DRIE). Conductive layer 108 is deposited over and into vias124 in electrical contact with conductive layer 100.

Referring to FIG. 11, deposition of encapsulant 106 is controlled toexpose a top surface of metal layer 100 and packages 102. Metal layer100, packages 102, and buffer layer 126 are deposited over encapsulant106. Buffer layer 126 includes a polymer stress buffer layer andprovides additional physical support and electrical insulation to thecomponents formed over and connected to wafer 80. In one embodiment,buffer layer 126 includes a photosensitive material such asphotosensitive polyimide or other buffer layer material. Buffer layer126 is etched by photo patterning or chemical etching to form vias 127and expose metal layer 100. Metal layer 108 is deposited over vias 127in electrical contact with metal layer 100.

In an alternative embodiment, encapsulant 106 covers packages 102, butexposes a top surface of metal layer 100. Alternatively, duringdeposition, encapsulant 106 covers both packages 102 and metal layer100. Buffer layer 126 and encapsulant 106 are etched to expose a portionof metal layer 100.

Turning to FIG. 12, a passivation layer 128 is formed over wafer 80below passivation 84. Passivation layer 128 includes one or more layersof dielectric material including SiO2, Si3N4, SiON, SiO2, or Si3N4.Passivation layer 128 acts as an etch stop layer to facilitate detectionof an end point of wafer 80 and to prevent damage to the devices formedover wafer 80 during wafer removal. An additional conductive layer 130is patterned and deposited over passivation layer 128 in electricalcontact with UBM 82. Passivation layer 128 is etched by photo patterningor chemical etching to expose conductive layer 130. Passivation layer128 is etched after removal of wafer 80, or before the deposition ofconductive layer 130. In this configuration, UBM 82 is formed in asingle metal stack with conductive layer 130, or is deposited andpatterned separately after passivation layer 128 is deposited.

The semiconductor devices in the various embodiments shown can bemanufactured using tools and equipment commonly known in the art, suchas wire bonding, patterning, etching and similar equipment. Thesemiconductor devices serve to continue to advance technology for theintegration of several components at reduced fabrication cost, whileresulting in larger overall repeatable quality.

While one or more embodiments of the present invention have beenillustrated in detail, the skilled artisan will appreciate thatmodifications and adaptations to those embodiments may be made withoutdeparting from the scope of the present invention as set forth in thefollowing claims.

1. A method of manufacturing a semiconductor device, comprising:providing a wafer; forming a first insulation layer over a top surfaceof the wafer; forming a first interconnect structure over the firstinsulation layer with temperatures in excess of 200° C.; forming aphotoresist layer having an opening over the first interconnectstructure; forming a metal pillar in the opening in the photoresistlayer and in electrical contact with the first interconnect structure;mounting a semiconductor die to the first interconnect structure with anactive surface of the semiconductor die facing the first interconnectstructure; forming encapsulant over the semiconductor die; forming asecond interconnect structure with temperatures below 200° C., thesecond interconnect structure including a first conductive layer formedover the encapsulant in electrical contact with the metal pillar and asecond insulation layer formed over the first conductive layer; andremoving a portion of a backside of the wafer opposite the top surfaceof the wafer.
 2. The method of claim 1, including forming a thermalrelease layer over the wafer.
 3. The method of claim 1, includingconnecting backgrinding tape over the second interconnect structure. 4.The method of claim 1, including bonding a permanent support substrateto the semiconductor device.
 5. The method of claim 1, wherein removingthe portion of the backside of the wafer opposite the top surface of thewafer includes: removing a first amount of the wafer using a grindingprocess; and removing a second amount of the wafer using a wet etch, dryetch, or chemical-mechanical planarization process.
 6. The method ofclaim 1, including etching a via into the encapsulant to expose aportion of the metal pillar.
 7. The method of claim 1, including forminga buffer layer over the semiconductor die.
 8. The method of claim 7,including etching a via into the buffer layer to expose a portion of themetal pillar.
 9. A method of manufacturing a semiconductor device,comprising: providing a wafer; forming a first interconnect structureover the wafer; forming a raised metal layer over the first interconnectstructure; mounting a semiconductor die over the first interconnectstructure with an active surface of the semiconductor die facing thefirst interconnect structure; forming encapsulant over the semiconductordie; forming a second interconnect structure with temperatures below200° C., the second interconnect structure including a first conductivelayer formed over the encapsulant in electrical contact with the raisedmetal layer and a first insulation layer formed over the firstconductive layer; and removing a portion of a backside of the wafer. 10.The method of claim 9, including forming a thermal release layer overthe wafer.
 11. The method of claim 9, including connecting backgrindingtape over the second interconnect structure.
 12. The method of claim 9,including bonding a permanent support substrate to the semiconductordevice.
 13. The method of claim 9, wherein removing the portion of thebackside of the wafer includes: removing a first amount of the waferusing a grinding process; and removing a second amount of the waferusing a wet etch, dry etch, or chemical-mechanical planarizationprocess.
 14. The method of claim 9, including etching a via into theencapsulant to expose a portion of the raised metal layer.
 15. Themethod of claim 9, including forming a buffer layer over thesemiconductor die.
 16. The method of claim 15, including etching a viainto the buffer layer to expose a portion of the raised metal layer. 17.A method of manufacturing a semiconductor device, comprising: providinga wafer; forming a first insulation layer over a top surface of thewafer; forming a first interconnect structure over the top surface ofthe wafer; removing a portion of a backside of the wafer opposite thetop surface of the wafer to expose a portion of the first insulationlayer; removing the portion of the first insulation layer to expose aportion of the first interconnect structure; connecting a firstsemiconductor die to the exposed portion of the first interconnectstructure; and depositing a first encapsulant over the firstsemiconductor die.
 18. The method of claim 17, including: forming araised metal layer over the exposed portion of first interconnectstructure; mounting a second semiconductor die over the firstinterconnect structure; forming a second encapsulant over the secondsemiconductor die; and forming a second interconnect structure withtemperatures below 200° C., including a first conductive layer formedover the second encapsulant in electrical contact with the raised metallayer and a second insulation layer formed over the first conductivelayer.
 19. The method of claim 17, including forming a release layerover the wafer.
 20. The method of claim 17, wherein removing the portionof the backside of the wafer opposite the top surface of the waferincludes: removing a first amount of the wafer using a grinding process;and removing a second amount of the wafer using a wet etch, dry etch, orchemical-mechanical planarization process.
 21. The method of claim 17,including depositing a supporting substrate over the first encapsulant.